ENGINEERING SERVICES ON TRANSISTORS.
Abstract
Planar germanium transistors were fabricated by a two-oxide process. Performance has improved considerably over that reported earlier for devices of similar geometry. Gain figures of 12 to 14 db at 4 Gc and 7 to 8 db at 6 Gc have been measured on both common-base and common-emitter devices. Maximum available power gains of 8 db at 2 Gc and 2.5 db at 4 Gc were obtained on common-emitter units. A technique is described for batch-fabrication of semiconductor devices whose leads are an integral part of the device itself. These beam leads are cantilevered beyond the edges of the semiconductor wafer, allowing direct bonding or welding to a substrate without applying any pressure to the wafer itself. The semiconductor wafer need not be brazed to the substrate since the leads will withstand at least 135,000 g's acceleration and provide adequate mechanical support for the device. The use of these preformed leads imposes no electrical penalty on the unit. Chapter 4 illustrates the application of beam-lead devices to multichip integrated circuits. Two DCTL circuits are described; one with beam-lead transistors and beam-lead resistors appliqued to a ceramic substrate, and the other using beam-lead transistors on a ceramic substrate with tantalum thin-film resistors. A linear amplifier with thin film resistors is also shown.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1965
- Accession Number
- AD0615584
Entities
People
- C. R. Crowell
- M. P. Lepselter
- R. E. Davis
- R. E. Maher
- R. L. Pritchett