JUNCTION EFFECTS IN COMPOUND SEMICONDUCTORS,
Abstract
Work is described which indicates major progress has been achieved by extending to binary and ternary III-V compounds, i.e., to GaP and GaAsP, the vapor-liquidsolid (VLS) growth mechanism demonstrated recently in silicon by Wagner and Ellis. This has made possible the growth of dislocation-free III-V compounds and helps elucidate the mechanisms controlling the growth of these complicated materials. Further effort has been expended and progress achieved in the synthesis of laser-quality GaAsP. The effects of doping impurities on growth of single crystal GaAsP are mentioned. The dislocation densities observed are also mentioned. The properties of lasers fabricated to date in this program are tabulated. The behavior of threshold current in a certain crystal as a function of Fabry-Perot reflector spacing is presented. The current state of electron bombardment experiments is outlined. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1965
- Accession Number
- AD0616002
Entities
People
- C. J. Nuese
- C. M. Wolfe
- M. D. Sirkis
- N. Holonyak Jr.
Organizations
- University of Illinois Urbana–Champaign