AN INVESTIGATION OF THE PHOTOVOLTAIC EFFECT ASSOCIATED WITH A LIFETIME GRADIENT IN A SEMICONDUCTOR.
Abstract
The photovoltage due to a lifetime gradient in a semiconductor is investigated. Equations for small signal and large signal cases are presented. Methods of producing lifetime changes are discussed. These include diffusion of impurities and irradiation by high energy particles. Attempts were made to observe the effect as produced by the latter method. Types of bombarding particles included 300 KeV protons, 400 KeV electrons and 3 MeV electrons. The result of each attempt is discussed in detail. An effect whose origin has not been unequivocally established has been observed. Its sign is opposite to that predicted by theory for the lifetime effect. Calculations indicate that it is probably not caused by resistivity differences between the two sections of the sample. Suggestions are offered for possible future experiments. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1965
- Accession Number
- AD0616764
Entities
People
- Ralph M. Esposito
Organizations
- Brown University