MICROWAVE AMPLIFIER PERFORMANCE OF GERMANIUM TRANSISTORS.
Abstract
The report describes an investigation of available microwave transistors in a standard, single-stage amplifier configuration at L-band. The program consisted of the measurement of a total of 70 transistors from Bell Telephone Laboratories and Texas Instruments for noise and power gain properties at two frequencies near 1.0 Gc. The measurement conditions consisted of two emitter current levels, 2 and 5 milliampers, and combinations of impedance matching on the input and output ports. Standard coaxial r-f components were used, with isolators at the input and output ports of the amplifier to establish an exact 50 ohm reference. Y-parameters were also measured on the BTL transistors. The y-parameters were used to calculate quality factors such as unilateral gain, maximum stable gain, and maximum available gain. Noise figure was calculated for an average of the y-parameters as a function of frequency and source resistance. The measured gains and noise figures were compared to calculated values and correlation data is presented. Statistical analysis results are presented on distribution of calculated and measured gains and noise figures. For application as an r-f preamplifier, the units were evaluated in terms of noise measure, which combines gain and noise characteristics. Noise measure is displayed for all d-c and r-f measurement conditions. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1965
- Accession Number
- AD0616772
Entities
People
- G. E. Hambleton
- V. Gelnovatch
Organizations
- United States Army Communications-Electronics Command