L-BAND AMPLIFIER DESIGN FROM TWO-PORT PARAMETERS.
Abstract
Transistors now possess the capability to operate in the L-band region. This report describes an amplifier design using y-parameters measured at the design frequency and the fabrication of a laboratory amplifier model. Design calculations and performance data are presented. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1965
- Accession Number
- AD0617373
Entities
People
- G. E. Hambleton
- V. Gelnovatch
Organizations
- United States Army Communications-Electronics Command