TRANSISTOR, FIELD EFFECT, INSULATED GATE, 100 MC AMPLIFIER.

Abstract

Design, manufacture, and evaluation of two study devices, the MOS I and MOS II insulated-gate field-effect transistors, have been completed. Effect of masking tolerances and high-frequency properties have been evaluated; data on d-c and a-c characteristics are recorded and compared to theory. It was found that the major limitation to device performance was the gate-source distributive resistance that charges the gate-source capacitance. A series resistance of approximately 15 ohms transforms into a parallel resistance of 17K at 100 mc. This reduces the real part of the input impedance to 6K typical. This problem will be solved by redesigning the gate bonding pad and shortening the gate length in MOS III to meet the required 20 db power gain for a 100 mc amplifier. (Author)

Document Details

• Document Type: Technical Report
• Publication Date: Mar 01, 1965
• Accession Number: AD0617424

Entities

People

• Gerald L. Parker

Tags

Communities of Interest

• Advanced Electronics

DTIC Thesaurus Topics

• Amplifiers
• Capacitance
• Electronic Amplifier
• Electronic Equipment
• Electronics
• Field Effect Transistors
• Frequency
• Gain
• Impedance
• Power Gain
• Resistance
• Semiconductor Devices
• Solid State Electronics
• Test And Evaluation
• Transistor Amplifiers
• Transistors

Readers

• Electronics Engineering
• Semiconductor Device Technology

Technology Areas

• Microelectronics
• Microelectronics - Microelectromechanical Systems