HIGH POWER VARACTOR FOR UHF TRANSMISSION.

Abstract

The report describes the epitaxial layer structure and its evaluation and control. The theory covering the diffusion of impurities during epitaxial growth is discussed. Improved low temperature oxide passivation is described. Comparisons are made between unpackaged and packaged die characteristics. Minor changes in the test circuit are noted. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 31, 1965
Accession Number
AD0617539

Entities

People

  • G. A. Louis

Organizations

  • Motorola Mobility

Tags

DTIC Thesaurus Topics

  • Coverings
  • Critical Temperature
  • Diffusion
  • Epitaxial Growth
  • Glass Transition Temperature
  • Impurities
  • Low Temperature
  • Test And Evaluation
  • Transition Temperature

Readers

  • Electronics Engineering
  • Semiconductor Device Technology