DEVELOPMENT OF EPITAXIAL TECHNOLOGY FOR MICROELECTRONICS AND LARGE AREA DEVICE APPLICATIONS.
Abstract
Work has essentially been completed on PNPN lightsensitive matrices made by both oxide-masked epitaxy and by epitaxy-diffusion techniques. Matrices fabricated with the latter technique are considerably more sensitive, turning on with only 0.2 foot-candles of incident illumination. (This sensitivity can be reduced with a subsequent improvement in uniformity from unit to unit.) Measurement methods are described, and light sensitivity results are given for both types of units. A search for the best method for making matched NPN-PNP transistor pairs has begun. A discussion of the pros and cons of all known methods is presented, with the conclusion that the beam lead process offers the most practical way to achieve such devices. A slowing down of this portion of the program will result to allow related company-funded beam lead developments to catch up with device fabrication developments under the contract. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1961
- Accession Number
- AD0617543
Entities
People
- J. Eknaian
- Pingshan Wang
- R. Yee
Organizations
- Sylvania Electric Products