RELIABLE DIELECTRIC FILMS FOR MICROCIRCUITS.
Abstract
By means of electron microscope study techniques, important properties of aluminum electrode edges were determined. Premature capacitor breakdown at edges is most likely caused by a 3 to 5 fold field enhancement at the edge. The taper at electrode edges is 5 degrees or less, with a radius of about 200 A at the tip of the edge. Such a razor edge will give rise to field enhancement such that the edges can be at breakdown voltage while the planar portion of the capacitor is not. It was found that electrical leakage of SiO capacitors is enormously sensitive to deposition rate and somewhat sensitive to thickness; and that deposition rate and thickness interact in their effect on leakage. Life tests of SiO capacitors of 1000 A and 10,000 A dielectric thicknesses at 85 C and 10,000 A thickness at 125 C were successful showing that fabrication procedures developed in a predecessor contract represented an improvement over existing procedures. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1965
- Accession Number
- AD0617958
Entities
People
- Gilbert A. St. John
- Saul W. Chaikin
Organizations
- SRI International