DEFINITION OF CERTAIN PARAMETERS OF SEMICONDUCTOR MATERIALS WITH HELP OF IRRADIATION OF P-N JUNCTIONS BY ELECTRONS,

Abstract

The action of an electron beam on silicon photocells with a barrier layer is investigated; in particular, the dependence of the current of a photocell irradiated by electrons on the energy of the electrons during its change from 0 to 30 Kev and on the intensity of the electron beam is examined.

Document Details

Document Type
Technical Report
Publication Date
Jul 13, 1965
Accession Number
AD0618049

Entities

People

  • A. Shalpykov
  • E. M. Lobanov

Organizations

  • National Air and Space Intelligence Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electron Beams
  • Electronics
  • Electrons
  • Extrinsic Semiconductors
  • Intensity
  • Materials
  • P-N Junctions
  • Photoelectric Cells (Semiconductor)
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Pulsed Power and Plasma Physics.

Technology Areas

  • Directed Energy
  • Microelectronics