STUDY FOR GENERALIZED MODEL FOR SEMICONDUCTOR RADIATION RESPONSE PREDICTION.
Abstract
The lumped-model technique was applied to the characterization of the radiation-induced transient response observed in diodes and transistors. A significant result of the diode analysis was the comparison of the lumped-model response to the solution of the differential equations in describing the diode photocurrent. Application of the lumped-model analysis to the ionizing radiation effects in a grown junction transistor was also straightforward and encouraging. A general expression for the common-emitter transient response was developed in terms of the transistor and commonemitter circuit parameters. This expression allows the calculation of the total transient collector photocurrent as a function of the source resistance, and the quiescent operating current. The experiments necessary to determine the diode and transistor lumped-model parameters were defined. These experiments were completed with the grown-junction transistors specimens, completing the information required for numerical prediction of the transistor response. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1965
- Accession Number
- AD0618079
Entities
People
- James P. Raymond
- William W. Chang