EXPLORATORY DEVELOPMENT OF THE Q-FACTOR TECHNIQUE.
Abstract
Data for predicting transistor gain degradation in a neutron radiation environment were obtained from experimental studies of the variation of the radiation damage constant K as a function of temperature and current during both measurement and irradiation. Relatively small spreads in the values of K were obtained when the individual base transit times were measured and the radiation exposures were precisely determined. Radiation damage effect data from 20 different n-p-n silicon transistor types were obtained and normalized to the same minority carrier concentration in the base region, using the transit time and the V sub BE-I sub C characteristics of the specific transistors. The resulting relative dispersions of the damage constant for minority carrier densities of 10 to the 15th power/cc and 10 to the 16th power/cc were typically 15 to 20 percent. These dispersions indicate that electrical measurements of transistor physical parameters can provide reasonably accurate predictions of the gain degradation for a wide variety of transistors without additional radiation testing of specific transistor types. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 13, 1965
- Accession Number
- AD0618194
Entities
People
- Max Frank