INVESTIGATION OF TRANSIENT RADIATION DAMAGE IN SEMICONDUCTOR MATERIALS.

Abstract

Transient radiation damage effects in high purity p-type silicon due to 50 MeV electrons were observed. Roughly equal changes in magnitude and decay time of photoconductivity occurred; 30 to 60% of these changes annealed out within the first few minutes after the electron pulse. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 31, 1965
Accession Number
AD0618494

Entities

People

  • H. James Willard Jr.
  • John C. Corelli
  • Roland M. Lichtenstein

Organizations

  • Rensselaer Polytechnic Institute

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Corpuscular Radiation
  • Electromagnetic Radiation
  • Electronics
  • Electrons
  • Elementary Fermions
  • Elementary Particles
  • Fermions
  • Ionizing Radiation
  • Materials
  • Nuclear Radiation
  • Photoconductivity
  • Radiation
  • Semiconductors
  • Solid State Electronics
  • Subatomic Particles

Fields of Study

  • Physics

Readers

  • Mathematics or Statistics
  • Mechanical Engineering/Mechanics of Materials.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics