INVESTIGATION OF TRANSIENT RADIATION DAMAGE IN SEMICONDUCTOR MATERIALS.
Abstract
Existing equipment was modified and a reliable single pulse light source developed which can be used in the high radiation field of the LINAC target room. One run was made at the LINAC site during which a satisfactory method of obtaining a single electron pulse was found. From the run at the LINAC, it was found that significant permanent damage occurs in one electron burst; however, no transient radiation damage at 10 milliseconds after the electron pulse was observed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 31, 1964
- Accession Number
- AD0618495
Entities
People
- Roland M. Lichtenstein
Organizations
- Rensselaer Polytechnic Institute