RESEARCH ON SOLID STATE NOISE DEVICES.
Abstract
This report is concerned with an experimental investigation of a silicon noise diode having an avalanche breakdown voltage of approximately 12 volts and capable of producing high amplitude white noise over the frequency range 40 kc to 200 kc. The influence of the device parameters on the performance of completed devices from many independent diffusions is examined. A study of the design of a noise generator with high pulse rate is presented. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1965
- Accession Number
- AD0618496
Entities
People
- David Farrington