A FUNDAMENTAL STUDY OF EPITAXY BY FLASH EVAPORATION.
Abstract
A study was made of the conditions under which films of III-V compounds can be evaporated and deposited stoichiometrically onto a number of substrates. The crystalline nature and crystal quality of films of seven of the III-V compounds deposited onto Ge, CaF2, and GaAs substrates were studied with reference to changes in such parameters as evaporator and substrate temperature, lattice mismatch with substrate, and substrate orientation. Conditions were determined for the preparation of epitaxial films. Diodes were prepared in the deposited films by diffusion and alloying techniques. Electrical characteristics of these diodes were measured and found to be comparable with those in bulk material.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 30, 1965
- Accession Number
- AD0618909
Entities
People
- John L. Richards