INVESTIGATION OF ELECTRON BEAM PROCESSING OF ALUMINUM OXIDE AND RELATED MATERIALS.
Abstract
The objective of the contract is the growth of superior quality crystals by a modified electron beam float-zone process. Sapphire host crystals grown by the electron beam float-zone technique were evaluated by etch pit techniques and revealed dislocation counts as low as 1000-10000/sq cm. The etch pit technique further disclosed the absence of substructure. These results compare favorably with flame-fusion crystals which typically exhibit both substructure and dislocation counts of approx. 1,000,000/sq. cm. Doping studies are currently under way to determine the most feasible method of introducing controlled amounts of chromium in the high vacuum environment required by the electron beam process. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 15, 1965
- Accession Number
- AD0619044
Entities
People
- G. T. Murray
- W. Class