ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS,
Abstract
The wavelength dependence of the photoionization cross section for deep, semiconductor impurity centers, e.g., In doped Si, is calculated using a model in which the ground state wave function is determined solely by a suitable short range ion core potential. Absorption to excited states is explained by a long range, unperturbed coulomb potential. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1965
- Accession Number
- AD0619289
Entities
People
- G. Lucovsky