ON THE POSSIBLE GENERATION OF NEGATIVE TEMPERATURES IN A DOPED SEMICONDUCTOR UNDER STATIONARY EXCITATION,
Abstract
It is shown that by experimentally determining the magnitude of the kinetic coefficient of the transition from the i-th level to the L-th level, and probability of elementary radiation transition at a frequency where i>1, it is possible to evaluate the possibility of creating negative temperatures in semiconductors in a stationary regime of lighting.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 29, 1965
- Accession Number
- AD0619326
Entities
People
- A. A. Kolesnikov
- Z. I. Uritskii
Organizations
- National Air and Space Intelligence Center