INVESTIGATION OF HIGH POWER GASEOUS ELECTRONICS.
Abstract
Gas clean-up was investigated in an X-band TR tube over a 20 to 300C temperature range. An Arrhenius plot of chemisorption of water vapor in the bronze walls and brazing solder yielded an energy of activation of 6.0 kcal/mole. Negligible clean-up occurred in a 1 watt RF discharge was independent of ambient temperature. Maximum clean-up of water vapor occurred at 20C for a 10 watt RF discharge at a 7070 glass-kovar window. An energy of activation of 6.0 kcal/mole for clean-up at the window was measured. Diffusion controlling mechanisms were indicated because of the dependence of clean-up and chemisorption on the square root of time. Discharges in gas mixtures containing ammonia caused evolution of gas due to reduction of oxides formed in the water vapor discharges. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 15, 1965
- Accession Number
- AD0619421
Entities
People
- H. S. Maddix
Organizations
- M/A-COM Technology Solutions