NOISE OPTIMIZATION OF FIELD-EFFECT TRANSISTORS,

Abstract

The field-effect or unipolar transistor was compared with bipolar and thermionic devices and a method was sought to minimize internally generated noise. Both operation without a gate-biasing resistor and operation at cryogenic temperatures resulted in noise reduction. At low audio frequencies, 1/f noise impaired performance but was not detrimental when large values of source resistance were used. A theoretical break-frequency for the f squared noise exhibited at ultrasonic frequencies was determined. The comparative noise performance of a unipolar and a bipolar transistor for a given resistive source was studied. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1965
Accession Number
AD0619459

Entities

People

  • A. G. Diloreto
  • R. W. Larson

Organizations

  • Naval Air Weapons Station China Lake

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Audio Frequency
  • Bipolar Junction Transistors
  • Field Effect Transistors
  • Frequency
  • Noise
  • Noise Reduction
  • Resistance
  • Transistors
  • Ultrasonic Frequencies

Readers

  • Acoustics.
  • Electrical Engineering
  • Electronics Engineering