EQUIVALENT CIRCUIT AND INTERGATE CAPACITANCE OF FOUR-TERMINAL FIELD-EFFECT TRANSISTORS,

Abstract

The high-frequency equivalent circuit of four-terminal field-effect transistors is examined, and it is shown that there exists an equivalent intergate capacitance whose value exhibits very abrupt changes with voltage near the drain-current cut-off point. Experimental results are shown to be in fairly good agreement with those predicted from theory. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 08, 1965
Accession Number
AD0619622

Entities

People

  • R. S. C. Cobbold

Organizations

  • University of Saskatchewan

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Agreements
  • Capacitance
  • Circuits
  • Electronics
  • Equivalent Circuits
  • Field Effect Transistors
  • Frequency
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Terminals
  • Transistors

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Theoretical Analysis.