HIGH POWER SEMICONDUCTOR TR DEVICES.

Abstract

Efforts have resulted in improved performance of the X sub L-Band Switch design. The improvements through electrical and mechanical changes in the switch design resulted in greater operational bandwidth and improved diode mounting. The Ku-band work on evaluation of limiter diodes has been continued. Performance data of diodes is given in this report. New Ku-band diode mounts have also been evaluated and show improvements in overall performance. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 31, 1965
Accession Number
AD0619679

Entities

People

  • R. H. Brunton Iii.

Organizations

  • M/A-COM Technology Solutions

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Bandwidth
  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Frequency
  • Frequency Bands
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Ku Band
  • L Band
  • Radio Frequency
  • Semiconductors
  • Solid State Electronics
  • Test And Evaluation

Fields of Study

  • Materials science

Readers

  • Electronics Engineering

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems