THIN FILM TECHNIQUES FOR SILICON INTEGRATED CIRCUITS.

Abstract

Flash evaporation of cermet resistive materials and plasma-anodized capacitor dielectrics was investigated. A problem encountered in flash evaporation of cermet materials was interference of the electron beam and magnetic field of the deflection system with the sheetresistance monitoring circuit. Shielding the leads to the test sample and the thermocouple monitoring substrate temperature eliminated the interference. Leaks developed in the plasma-anodization system. The system has been repaired and is back in operation. Low-energy sputtering of cermet films has been investigated. Work on vapor-plated capacitor dielectrics has continued. Masks for the broadband linear amplifier circuit are now available and initial samples of the circuit are being processed. Initial samples of the thin-film logic gate are being analyzed. (Author)

Document Details

Document Type
Technical Report
Publication Date
Feb 28, 1965
Accession Number
AD0619946

Entities

People

  • C. E. Phillips
  • R. W. Wilson

Organizations

  • Motorola Mobility

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitors
  • Circuits
  • Dielectrics
  • Electron Beams
  • Evaporation
  • Films
  • Integrated Circuits
  • Logic Gates
  • Magnetic Fields
  • Materials
  • Materials Processing
  • Monitoring
  • Thin Films
  • Transition Temperature

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene
  • Microelectronics - Microelectromechanical Systems