PULSING AND CROSSTALK STUDIES IN SEMICONDUCTOR CIRCUITS.

Abstract

Transistor distortion in RF amplifiers was evaluated. Additional consideration was given to parameter measurement, noise figure, AGC and transistor RF stability. A step by step design procedure was arrived at. The RF properties of field effect transistors were studied.

Document Details

Document Type
Technical Report
Publication Date
Mar 30, 1965
Accession Number
AD0620048

Entities

People

  • G. Burton Harrold
  • W. Reichel

Organizations

  • General Electric

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Co-Channel Interference
  • Compound Semiconductors
  • Distortion
  • Electronic Amplifier
  • Electronic Equipment
  • Electronics
  • Field Effect Transistors
  • Measurement
  • Metal Oxide Semiconductors
  • Radio Frequency Amplifiers
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Transistor Amplifiers
  • Transistors

Fields of Study

  • Physics

Readers

  • Electronics Engineering

Technology Areas

  • Microelectronics