MICROWAVE STUDIES OF SEMICONDUCTING DIAMONDS.

Abstract

An initially non-conducting diamond treated with boron under high temperature - high pressure conditions was shown to have semiconducting properties. By means of successive experiments in which portions of the specimen were removed by cleaving and polishing, an estimate of thickness of the semiconducting layer (depth of diffusion) was obtained. The conductivity and activation energy of the semiconducting layer were deduced from the data. In many similar doping experiments, negative results were obtained in the sense that the only observed microwave loss could be associated with surface deterioration (formation of graphite or boron carbide). The perturbation formulas for lossy semiconducting specimens were extended and applied to the analysis of loss-versustemperature data of natural (IIb) semiconducting diamonds. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 14, 1965
Accession Number
AD0620085

Entities

People

  • Marshall H. Sirvetz

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boron Carbides
  • Carbides
  • Conductivity
  • Diffusion
  • Energy
  • Graphitic Materials
  • Heat Of Activation
  • High Pressure
  • High Temperature
  • Microwaves
  • Perturbations
  • Polishing
  • Thickness

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Microwave Engineering.
  • Surface Engineering/Surface Coating Technology.