AN INVESTIGATION OF SURFACE STATES ON SILICON EMPLOYING THE MOS CAPACITANCE METHOD.

Abstract

The MOS (metal-oxide- semiconductor) device was used to measure the density and position within the forbidden gap of surface states on silicon. The theory of the silicon space charge is discussed and an equation for this charge is derived, relating it to the voltage drop across the silicon. The MOS structure, fabrication, and variation of capacity with d. c. bias voltage are discussed. Experimental results are presented of the determination of surface state density versus position in the band gap.

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1965
Accession Number
AD0620450

Entities

People

  • Donald W. Roberds

Organizations

  • Kansas State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Capacitance
  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Energy Bands
  • Equations
  • Fabrication
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Oxides
  • Semiconductors
  • Space Charge

Fields of Study

  • Materials science

Readers

  • Fluid Dynamics.
  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Space
  • Space - Hall-Effect Thruster