HIGH SPEED POWER AMPLIFIER USING AN ELECTRON SWITCHED P-N JUNCTION.
Abstract
A 'paint on' diffusion run was made and diodes were etched from this material for evaluation. The starting material was 'N' and the boron penetration was measured using the 'angle lap stain' technique. The penetration was 1.8 mils. The breakdown voltage measures approximately 800 V and the leakage, (I sub r), is in the order of 10 microamp at 600 V. A vacuum system has been modified to include jigging for electrical connection to wafers under vacuum. A heatable platform with a therometer and variable power supply is also included so that a diode or wafer can be monitored using a curve tracer under controllable conditions of pressures and temperature. Some bare junction diodes have been monitored under various temperatures and pressures (in the order of .01 micron) using this equipment. Diffusion furnaces and the necessary accessories have been readied for: (1) Simultaneous P and N 'paint on', (2) boron pre-diffusion using BBr3, (3) boron drive and simultaneous oxide growth, and (4) initial oxide growth in steam. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 27, 1965
- Accession Number
- AD0620920
Entities
People
- Nelson E. Ake