ON THE ANALYSIS OF THERMALLY STIMULATED PROCESSES IN CRYSTALS.

Abstract

The relation between thermoluminescence curves and thermally stimulated current curves is discussed assuming that electrons are stimulated from traps to recombination centers through the conduction band. A method for calculating the recombination probability by simultaneous measurement of thermoluminescence and thermally stimulated current is given. Some special cases are discussed more thoroughly, especially the case of an extrinsic semiconductor (semiconducting diamond for example), heated according to a hyperbolic heating programme. A preliminary comparison of theory and experiment is made. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1965
Accession Number
AD0621038

Entities

People

  • A. Halperin
  • R Chen

Organizations

  • Israel Atomic Energy Commission

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Conduction Bands
  • Cooperation
  • Electronics
  • Electrons
  • Energy Bands
  • Extrinsic Semiconductors
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Measurement
  • Probability
  • Semiconductors
  • Silicon Carbide
  • Thermoluminescence

Readers

  • Optical Physics and Photonics.
  • Regression Analysis.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics