HOT-SPOT MESOPLASMA FORMATION IN SILICON PLANAR TRANSISTORS.

Abstract

A model is presented to explain the cause of mesoplasmas when secondary breakdown occurs in silicon planar transistors. An analysis of both aluminum and gold metalized devices is presented. To substantiate the model, data are presented from experiments using an electron microprobe and an infrared scanner, both used to analyze the second breakdown sites. Two areas of investigation are suggested which may prove effective in reducing the destructive effects of hot spots and mesoplasmas in transistors. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1965
Accession Number
AD0621141

Entities

People

  • E. B. Hakim

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum
  • Electrons
  • Hot Spots
  • Microprobes
  • Transistors

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Microelectronics