FIELD EFFECT ON MAGNETORESISTANCE OF N-TYPE INDIUM ANTIMONIDE,

Abstract

The field effect on the magnetoresistance of n-type indium antimonide was studied for various temperatures and magnetic fields. It was found that the ratio of the surface mobility to the bulk mobility decreases with increasing magnetic field beyond a given value of the magnetic field. This phenomenon is attributed to the quantization of the motion of electrons in the presence of an electric and magnetic field. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 21, 1965
Accession Number
AD0621205

Entities

People

  • Harry C. Gatos
  • Howard Huff
  • Kawaji Shinji

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Antimonides
  • Antimony Compounds
  • Chemical Compounds
  • Electrons
  • Elements
  • Group 13 Elements
  • Indium
  • Indium Antimonides
  • Inorganic Chemicals
  • Magnetic Fields
  • Magnetoresistance
  • Metals
  • Mobility
  • Post-Transition Metals

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Superconducting Magnet Technology

Technology Areas

  • Microelectronics