FAST NEUTRON IRRADIATION-EFFECTS ON GAAS(1-X)P(X) P-N DIODE LASER THRESHOLD CURRENTS,
Abstract
Two of the major problems associated with the construction of laser diodes from ternary system material are the chemical purity and the inhomogeneous polycrystalline nature of the final product. Both effects increase the current density necessary for laser action. In this investigation, 4 GaAs(1-x)P(x) diodes of various phosphorus substitution percentages were bombarded with fast neutrons in order to determine the dependence of threshold current densities on the total neutron flux. It appeared that surface damage effects of the laser cavity masked any information concerning the crystalline homogeneity effects on laser current thresholds. Present investigation is being made of irradiations of the initial crystal material and subsequent polishing into laser cavities to remove such surface effects. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1965
- Accession Number
- AD0621308
Entities
People
- C. J. Nuese
- C. M. Wolfes
- J. H. Doede
- N. Holonyak
- R. H. Vonderohe
Organizations
- Cornell University College of Engineering