LOW-NOISE L-BAND TRANSISTOR.
Abstract
A research and development program is described for a germanium microwave low-noise amplifier transistor with a noise figure goal of 3.0 db and practical gain at 1.3 Gc. Final state-of-the-art samples averaged 3.1 db noise figure and 9.4 db gain. Technology work is described and the device design is discussed. Microwave testing is discussed and test results are given. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1965
- Accession Number
- AD0621532
Entities
People
- Doyle S. Granberry
- Richard L. Petritz
- Roger R. Webster
Organizations
- Texas Instruments