A THRESHOLD ANALYSIS OF THE TUNNEL INJECTION LASER.
Abstract
A new threshold analysis of the tunnel injection laser is given that differs from previous treatments in that an additional loss mechanism is considered. This new loss mechanism, a result of the attenuation the photon wave suffers because of the power loss in the confining metal boundaries, causes a slight increase in the threshold current density of the tunnel laser. For a device one millimeter long composed of GaAs at 77K, the threshold current is 54 A/sq cm. The analysis of the loss suggests a modification of the originally proposed thickness of the semiconductor wafer. In order that a lasing mode propagate with negligible power loss in the metal boundaries, the thickness of the semiconductor region should be increased to ten microns. This would facilitate the fabrication of the wafer, but may result in a pulsed output. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1965
- Accession Number
- AD0621556
Entities
People
- C. Wheeler
Organizations
- Cornell University College of Engineering