STUDIES ON HIGH POWER GAAS LASERS.
Abstract
The report is a report on the studies of factors influencing the high power operation of GaAs injection laser diodes. The report deals specifically with aspects of GaAs crystal preparation, electrical and optical characterization of the material, and with the design, parameterization, and testing of GaAs injection laser diodes. Diodes have been operated at 77K with an energy output in excess of 0.001 joules during a 120 micron sec. pulse and with an external quantum efficiency of 18%.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 31, 1965
- Accession Number
- AD0621649
Entities
People
- R. S. Title
Organizations
- IBM Thomas J. Watson Research Center