NEW SOLID-STATE DEVICE CONCEPTS.
Abstract
Attention on CdS was shifted to stoichiometric problems and the effects of O2. Because of the high stability of SO2, firing CdS in O2 produces a 'reducing' action on the bulk crystal, equivalent to a small excess Cd firing. Electrical transport and contact properties of 1 to 10 ohm-cm ntype ZnS crystals were studied. Two types of levels were found below the conduction band of ZnS: shallow donor levels at 0.014 ev and deeper levels between 0.10 and 0.29 ev. Injection electroluminescent p-n junctions have been prepared from ZnSe0.36Te0.64 which show external quantum efficiencies of 18% at 70K. The resistance of various alloyed contacts and gold thermocompression bonds to n- and p-type GaAs was measured. The interface resistance of evaporated films of Ag, Au, and Al applied to GaAs is high unless the films are subjected to a high-temperature alloying step which damages their reflecting properties. Excellent laser diodes were made in which the p-type side was chemically etched down to within 2 microns of the junction. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1965
- Accession Number
- AD0621941
Entities
People
- H. H. Woodbury
- M. Aven
- R. N. Hall
- R. O. Carlson
- R. S. Ehle
Organizations
- General Electric