GALVANOMAGNETIC PHENOMENA IN SEMICONDUCTORS AT LOW TEMPERATURES.

Abstract

Computer calculations are in progress on the following problems: (1) Ionization energy of donor impurities in indium antimonide, (2) Magnetoresistance of p-type germanium including quantum effects, (3) Electron transport theory in high electric and magnetic fields. Experimental results on transversed magnetoresistance in pulsed magnetic fields to 185 kilogauss of single crystals of n-type germanium have been obtained. Work is in progress on measurements of electrical transport properties of n-InSb below 1K. (Author)

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1965
Accession Number
AD0622209

Entities

People

  • S. C. Miller
  • W. F. Love

Organizations

  • University of Colorado Boulder

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Antimonides
  • Chemical Compounds
  • Compound Semiconductors
  • Computers
  • Crystals
  • Electronics
  • Electrons
  • Elements
  • Germanium
  • Indium Antimonides
  • Low Temperature
  • Magnetic Fields
  • Magnetoresistance
  • Semiconductors
  • Single Crystals
  • Transport Properties
  • Transport Ships

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Superconducting Magnet Technology

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Dots