THE USE OF METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOST) IN COMPLEMENTARY CONFIGURATIONS.

Abstract

The metal-oxide-semiconductor field effect transistor (MOST) extends scope of complementary circuits because the enhancement device conducts under different (but complementary) conditions from those of the depletion device. Twenty-two MOST equivalents to ten existing bipolar complementary configurations were found in a nonexhaustive comparison. An empirical equation was found for the MOST characteristics. One typical configuration was analyzed using the empirical equations with good comparison to test results. Five applications of the configuration were investigated: A.M. modulator, pulse amplitude modulator, multiplier, amplifier with a voltage controlled gain (positive or negative), and product detector. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1965
Accession Number
AD0622424

Entities

People

  • Roger Andre Gagnon

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Amplitude Modulators
  • Compound Semiconductors
  • Detectors
  • Electronic Amplifier
  • Equations
  • Field Effect Transistors
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Modulators
  • Oxides
  • Pulse Amplitude
  • Semiconductor Devices
  • Semiconductors
  • Transistors

Readers

  • Electronics Engineering
  • Regression Analysis.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics