EXOELECTRON EMISSION FROM THIN FILMS.
Abstract
Electron trapping in thin aluminum oxide films was investigated through the measurement of electron emission obtained while heating the excited sample through the temperature range of 0 - 420C. Eight aluminum oxide films of different thicknesses were fabricated; six by vacuum evaporation and two by anodization. Results showed that films prepared by vacuum evaporation technique had traps distributed in energy with negligible retrapping. The films prepared by anodizing had two single valued traps of 1.29 ev for the deep traps and .69 ev for the shallow traps. Data indicated that as the film thickness decreases, the number of traps increases. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1965
- Accession Number
- AD0622426
Entities
People
- Duane M. Mathias
Organizations
- Air Force Institute of Technology