PRODUCTION ENGINEERING MEASURE FOR IMPROVEMENT OF PRODUCTION TECHNIQUES TO INCREASE THE RELIABILITY FOR PNP INTERMEDIATE POWER SILICON PLANAR SWITCHING TRANSISTORS INCLUDING 2N3502.
Abstract
The report describes the primary experiments on the deposition of an SiO2 layer in a horizontal epitaxial reactor and indicates the parameters affecting the uniformity of growth rate along the deposition boat. Work on the semiautomatic line was performed as scheduled. Completion of design was followed by installation of the entire system. A precise correlation between sheet resistance (V/I) and Beta distribution was established and used as a tool in further development. Temperature gradient across a wafer during predeposition operations was found to be the most significant cause of Beta variation. Wafers processed in flat position have shown the least amount of Beta variation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1965
- Accession Number
- AD0622821
Entities
People
- D. Floyd
- G. Potts
- Natalie Walker
- W. Mckeown