PRODUCTION ENGINEERING MEASURES (PEM) FOR A GERMANIUM MICROWAVE TRANSISTOR.
Abstract
The measured value of 1.5 Gc and 3.0 Gc noise figure of the common-emitter mounted L-78B device, after correction for the second stage noise contribution, is 3.4 db and 4.9 db respectively. All other measured parameters of the L-78B device meet the tentative electrical specifications. The newest pattern, the L-148, designed specifically to yield a device with greater power gain capability, met all of the device parameter specifications. Typical values of the common-emitter insertion gain of the L-148 device at 1.5 Gc and 3.0 Gc and 8.5 db and 5.2 db respectively. The corrected value of noise figure at 1.5 Gc and 3.0 Gc is 3.7 db and 5.5 db respectively. The electrical characteristics of the L-148 device are consistent with the design modification and represent an improvement in device performance over the L-78B, especially in the area of power gain capabilities. However, since only a limited amount of devices have been obtained using the L-148 pattern, the repeatability of the process remains to be established. Until the repeatability is determined, the L-148 process is considered to be in an optimization stage. The TI-Line package has been modified by increasing the diameter of the welding flange to afford greater welding area. The modification was necessary in order to prevent the package from becoming non-hermetic after the soldering heat test. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1965
- Accession Number
- AD0622982
Entities
Organizations
- Texas Instruments