THE INFLUENCE OF TEMPERATURE ON RADIATIONINDUCED SURFACE EFFECTS IN TRANSISTORS,
Abstract
Tests were performed to determine the influence of junction temperature on radiation-induced surface effects in transistors. Sets of the germanium transistor types 2N526, 2N501A, 2N43A and 2N599 and the silicon transistor type 2N329A were irradiated to an exposure of 13,100 r in controlled ambient temperatures of 0, 25, and 50C while individual I sub CBO (collector leakage current), Beta (common emitter current gain) and h sub ie (common emitter input impedance) levels were measured. The responses, predominantly upward, were shown to be significantly dependent on junction temperature. The radiation-induced changes in I sub CBO (delta I sub CBO) increased with temperature in all units up to a point, above which, in three Ge types, they decreased. Induced changes in gain (delta beta) showed no consistent temperature influence; but, analysis of the common base gain, alpha, showed changes (delta alpha) which decreased consistently with temperature in the Ge transistors and over a portion of the temperature range in the Si transistor. The responses of h sub ie generally followed those of beta. Thermal annealling of radiation effects appears responsible for the diminishing of delta alpha and delta I sub CBO with temperature. Post-irradiation recovery rates of delta I sub CBO increased with temperature and correlated with the delta I sub CBO vs temperature relations. No correlation could be established between the delta or delta beta vs temperature relation and the post-irradiation recovery rate of current gain. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 05, 1965
- Accession Number
- AD0623078
Entities
People
- Clarence F. Ramstedt
- Dan Y. Lee
- Harry A. Zagorites
Organizations
- Naval Radiological Defense Laboratory