HIGH PRESSURE RESEARCH AND SEMICONDUCTOR PHYSICS.
Abstract
Progress in the following areas is summarized: Optical and electrical properties of lead salts under pressure; electrical properties of grey tin as a function of pressure; effect of pressure on reflectivity spectra; spin resonance measurements on semiconductors; properties of the transition metal oxides; new ratio type spectrometer for the measurement of small increments in absorption coefficients; semiconducting properties of fosterite; Faraday rotation in semiconductors; optical properties of semiconductor thin films; band structure of gallium antimonide; infrared shift of the emission of lead salt diodes with pressure.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1965
- Accession Number
- AD0623144
Entities
Organizations
- Harvard University