SEMICONDUCTOR MICROWAVE AMPLITUDE AND PHASE MODULATOR.
Abstract
The drive power required to maintain a constant modulation index as the rf carrier power was varied from 0.22 mW to 2.5 mW was experimentally determined for the PIN amplitude modulator. A linear relation was found to exist between the modulation drive and the rf carrier power levels. Effort to stabilize the varactors for the phase modulator by coating the semiconductor surface with a thin dielectric film was continued. Ciba Araldite 6005 epoxy has been found to be effective in enhancing varactor stability. Experiments to encapsulate the varactor in an inert atmosphere with mylar windows or dielectric plugs were initiated. Theoretical analysis indicates that the voltage-dependent resistance of a properly biased PIN diode can be used to achieve phase modulation consistent with the program requirements. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 14, 1965
- Accession Number
- AD0623324
Entities
People
- D. Fleri
- F. Drago
- J. Zucker
- R. Harrison
- R. Socci