SEMICONDUCTOR RESEARCH.

Abstract

Contents: Electroluminescence Spikes in p-type GaSb; Ultrasonic amplification and intrinsic breakdown in InSb; Lithium diffusion and heat treatment of tellurium-doped n-GaSb; Weak field magnetoresistance in n-type aluminum antimonide; Transport measurements at moderate uniaxial and hydrostatic stresses, low temperatures, and large magnetic fields; Effect of stress on the resistivity and hall coefficient of aluminum antimonide; Effect of stress on the electrical properties of n-type GaAs; Effect of pressure on the electrical properties of n-type Silicon containing sulfur; Magnetoresistance of hop conduction in Ge; Excitation spectra of Group-V donors in silicon; Excitation spectra of donors in silicon-germanium alloys; Optical absorption of ZnTe; Electron paramagnetic resonance in electron irradiated germanium; Electron paramagnetic resonance in neutron irradiated silicon; Low temperature specific heat of reduced Ti02 (Rutile); Calorimetric study of vanadium in the superconducting, normal, and mixed states; Polaron in a magnetic field.

Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1965
Accession Number
AD0623397

Entities

People

  • H. Y. Fan

Organizations

  • Purdue University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electrical Properties
  • Electron Paramagnetic Resonance
  • Electrons
  • Germanium
  • Germanium Alloys
  • Heat Treatment
  • Low Temperature
  • Magnetic Fields
  • Measurement
  • Optical Absorption
  • Paramagnetic Resonance
  • Resonance
  • Semiconductors
  • Specific Heat

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene