TRANSISTOR, FIELD EFFECT, INSULATOR GATE, 100-MC AMPLIFIER.

Abstract

The present devices have power gains of 18 to 24db at 100mc operating at VsubD = 6 volts and IsubD =2 ma. Noise figures average about 2.5db. Average gate breakdowns are 85 volts; while the source-drain breakdowns average 20 volts. AGC and cross modulation characteristics are excellent. Noise measurements confirm the theory as predicted by Jordan and Jordan and exhibit a low pass roll off which occurs in the 10 to 100Mc region.

Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1965
Accession Number
AD0623403

Entities

People

  • M. Mitchell
  • R. Dawson

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Cross Modulation
  • Dielectrics
  • Electronic Amplifier
  • Electronic Equipment
  • Electronics
  • Gain
  • Measurement
  • Modulation
  • Power Gain
  • Semiconductor Devices
  • Solid State Electronics

Fields of Study

  • Physics

Readers

  • Electronics Engineering

Technology Areas

  • Microelectronics