THERMOELECTRIC MATERIALS.
Abstract
A new cell was developed employing an atmosphere of hydrogen to determine the resistivity of bismuth metal from 300 to 750C. The hydrogen atmosphere prevented the formation of oxide on the metal, and the values obtained agree very well with those reported in the literature for this temperature range. After the determination of the resistivity of liquid bismuth metal had been completed, the atmosphere was changed to helium, dried by passage through silica gel and oxygen removed by copper turnings held at 800C. Bismuth sulfide additions to the liquid bismuth were then made in amounts which increased the atom percent sulfur in steps of 5 percent up to 35 atom percent sulfur. The resistivity was determined over the temperature range from the solidification point of the composition to 750C for each step.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 15, 1963
- Accession Number
- AD0623570
Entities
People
- J. W. Johnson
Organizations
- SRI International