THEORETICAL INVESTIGATION OF A NONPLANAR FIELD-EFFECT TRANSISTOR,

Abstract

The report applies the generalized analysis of planar field-effect transistors developed by Richer to the calculation of theoretical performance in a volume field-effect transistor. Richer's analysis is illustrated first, then the mathematical techniques are extended to cover the case of an arbitrarily-shaped volume FET. This extended general analysis is then applied to a FET with circular cylindricalgeometry. Graphs of computer solutions of FET draincurrent, drain-voltage characteristics, and of equivalentcircuit element values are presented. The characteristics of the planar and cylindrical FET's are compared. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 07, 1965
Accession Number
AD0623593

Entities

People

  • S. R. Levine

Organizations

  • University of California, Berkeley

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Computers
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Field Effect Transistors
  • Nonplanar
  • Semiconductor Devices
  • Transistors

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Semiconductor Device Technology