X-RAY DAMAGE AND ANNEALING OF THESE DEFECTS IN CDS SINGLE CRYSTALS.

Abstract

The influence of x-ray damage at 250 keV and 300 keV in ultra-high vacuo on the spectral distribution of photoconductivity and conductivity glow curves is described. The observed damage can be explained by assuming a production of sulfur vacancies by x-rays and a later diffusion determined formation of associates of these vacancies with acceptors resulting in recombination centers. The threshold energy for sulfur vacancy formation lies at about 250 keV. (Author)

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1965
Accession Number
AD0623895

Entities

People

  • J. C. O'connell
  • Karl Wolfgang Boer
  • RenĂ© Schubert

Organizations

  • University of Delaware

Tags

DTIC Thesaurus Topics

  • Annealing
  • Conductivity
  • Crystals
  • Diffusion
  • Electrical Properties
  • Electricity
  • Photoconductivity
  • Physical Properties
  • Production
  • Single Crystals
  • X Rays

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Nuclear and Radiation Engineering.