THIN FILMS FORMED BY ELECTROCHEMICAL REACTIONS.
Abstract
Reactively sputtered thin films of tantalum oxide deposited onto thermally oxidized silicon offer a very wide range of sheet resistivities. The application of an external d-c bias to the substrate during sputtering alters sheet resistivity with no change in film thickness. Resistors of 237 ohms/sq changed less than 3% after 1000 hours at +125C and 2.5 watts/sq inch. Sputtering variables were investigated and optimized to improve resistor parameters. Reactively sputtered Ta2O5 dielectric films deposited onto aluminum electrodes offer capacitance values from 0.3 to 3.0 pF/sq. mil and d-c breakdown voltages of 60 to 6 volts, respectively. Capacitors tested for 1000 hours at +125C and 60% of destructive breakdown voltage changed less than 2% from initial capacitance. Substrate biasing during deposition can be used to improve the dielectric strength. Sputtering variables were investigated and optimized to improve capacitor parameters. A 455 kc amplifier is being used as a test vehicle for fabrication of a hybrid/monolithic circuit. The substrate is silicon with diffused transistors and thin film resistors and capacitors are deposited on the substrate. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1965
- Accession Number
- AD0623955
Entities
People
- Coy D. Orr
- R. Scot Clark
Organizations
- Texas Instruments